Photodiode based on epitaxial silicon for measuring UV emission with a wavelength of 254nm-Reference-Cited by-同舟云学术

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Photodiode based on epitaxial silicon for measuring UV emission with a wavelength of 254nm

Published:2024-01-05 Issue: Volume:121261V Page:15
ISSN:
Container-title:Sixteenth International Conference on Correlation Optics
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Author:

Dobrovolsky Yurii,Sorokatyi Yurii

Publisher

SPIE

Reference10 articles.

1. Silicon p-n photodiodes for the near ultraviolet spectral range.;Dobrovolsky;Semiconductor Electronics,,2001

2. Influence of chromium sublayer on silicon P-I-N photodiodes responsivity.;Kukurudziak,2021

3. Influence of Surface Resistance of Silicon p-i-n Photodiodes n+-Layer on their Electrical Parameters

4. Silicon carbide photodiodes: future solar-blind EUV/soft x-ray detectors

5. Influence of soft x-ray and ultraviolet irradiations on sensitivity of sensors made with piezoelectret films

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