Evolution of structural properties of Si(001) subsurface layer containing He bubbles by low temperature annealing-Reference-Cited by-同舟云学术

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Evolution of structural properties of Si(001) subsurface layer containing He bubbles by low temperature annealing

Published:2016-12-30 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Lomov Andrey A.¹,Shcherbachev Kirill D.²,Chesnokov Yury M.³,Kiselev Dmitrii A.²,Miakonkikh Andrew V.⁴

Affiliation:

1. Institute of Physics and Technology (Russian Federation)

2. National Univ. of Science and Technology MISiS (Russian Federation)

3. National Research Ctr. "Kurchatov Institute" (Russian Federation)

4. Institute of Physics and Technology (Russian Federation)

Publisher

SPIE

Reference13 articles.

1. (http://www.itrs.net/Links/2014ITRS/)

2. Ion Beam Modification of Solids

3. Helium desorption/permeation from bubbles in silicon: A novel method of void production

4. Gettering of metals by voids in silicon

5. Electrical properties of He-implantation-produced nanocavities in silicon

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