Calibration of a MOx-specific EUV photoresist lithography model-Reference-Cited by-同舟云学术

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Calibration of a MOx-specific EUV photoresist lithography model

Published:2020-03-23 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography XI
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Author:

Needham Craig D.,Narasimhan Amrit K.,Welling Ulrich,Melvin Lawrence S.,De Schepper Peter,Wouters Joren,Severi Joren,De Simone Danilo,Meyers Stephen

Publisher

SPIE

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advanced simulations using an improved metal oxide photoresist model;Advances in Patterning Materials and Processes XLI;2024-04-10

2. Hyper NA EUV lithography: an imaging perspective;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-11-14

3. Selection approach of critical patterns for calibrating the physical resist model based on spectrum coverage;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-10-26

4. Analytical approach to metal oxide resist modeling: exposure, bake, and network formation;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-08-17

5. Mask synthesis for silicon photonics devices;Integrated Photonics Platforms II;2022-05-26

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