Control over dark current densities and cutoff wavelengths of GaAs/AlGaAs QWIP grown by multi-wafer MBE reactor-Reference-Cited by-同舟云学术

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Control over dark current densities and cutoff wavelengths of GaAs/AlGaAs QWIP grown by multi-wafer MBE reactor

Published:2016-09-19 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Roodenko K.¹,Choi K. K.²,Clark K. P.¹,Fraser E. D.¹,Vargason K. W.¹,Kuo J.-M.¹,Kao Y.-C.¹,Pinsukanjana P. R.¹

Affiliation:

1. Intelligent Epitaxy Technology, Inc. (United States)

2. U.S. Army Research Lab. (United States)

Publisher

SPIE

Reference9 articles.

1. Quantum‐well infrared photodetectors

2. Detection wavelength of quantum‐well infrared photodetectors

3. Quantum well infrared photodetectors: present and future

4. Commercial production of QWIP wafers by molecular beam epitaxy

5. QWIPs at IRnova, a status update;Martijn,2016

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resonant detectors and focal plane arrays for infrared detection;Infrared Physics & Technology;2017-08

2. Control over the optical and electronic performance of GaAs/AlGaAs QWIPs grown by production MBE;Infrared Physics & Technology;2017-08

3. Resonator-QWIPs for 10.6 micron detection;Infrared Technology and Applications XLIII;2017-02-22

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