Design of thin InGaAsN(Sb) n - i - p junctions for use in four-junction concentrating photovoltaic devices-Reference-Cited by-同舟云学术

Design of thin InGaAsN(Sb) n - i - p junctions for use in four-junction concentrating photovoltaic devices

Published:2017-04-07 Issue:2 Volume:7 Page:022502
ISSN:1947-7988
Container-title:Journal of Photonics for Energy
language:en
Short-container-title:J. Photon. Energy

Author:

Wilkins Matthew M.¹,Gupta James²,Jaouad Abdelatif³,Bouzazi Boussairi³,Fafard Simon³,Boucherif Abderraouf³,Valdivia Christopher E.¹,Arès Richard³,Aimez Vincent³,Schriemer Henry P.¹,Hinzer Karin¹

Affiliation:

1. School of Electrical Engineering and Computer Science at the University of Ottawa, 25 Templeton Street, Ottawa K1N6N5, Canada

2. Institute for Microstructural Sciences, National Research Council, 1200 Montreal Road, Building M-50, Ottawa K1A 0R6, Canada

3. Laboratoire Nanotechnologies Nanosystèmes (LN2), CNRS UMI-3463, 3000 Boulevard Université, Sherbrooke J1K 0A5, CanadadUniversité de Sherbrooke, Institut Interdisciplinaire d’Innovation Technologique (3IT), 3000 Boulevard Université, Sherbrooke J1K 0A5, Canada

Publisher

SPIE-Intl Soc Optical Eng

Subject

Renewable Energy, Sustainability and the Environment,Atomic and Molecular Physics, and Optics

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