Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer-Reference-Cited by-同舟云学术

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Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer

Published:2017-01-05 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Gao Yang¹,Li Jun-ru²,Jia Le²,Lei Qiang²

Affiliation:

1. China Academy of Engineering Physics (China)

2. Southwest Univ. of Science and Technology (China)

Publisher

SPIE

Reference9 articles.

1. Development of RF MEMS Capacitive Shunt Switches;Yang;Semiconductor Optoelectronics,2011

2. Self-actuation tests of ohmic contact and capacitive RF MEMS switches for wideband RF power limiter circuits;Malmqvist,2012

3. RF power handling of capacitive RF MEMS devices;Pillans,2002

4. Design and analysis of series and shunt MEMS switches;Muldavin,2001

5. High-power handling capability of low complexity RF-MEMS switch in Ku-band

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