Thermal properties of Ga2O3 thin films and devices prepared on sapphire and SiC substrates by liquid-injection MOCVD-Reference-Cited by-同舟云学术

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Thermal properties of Ga2O3 thin films and devices prepared on sapphire and SiC substrates by liquid-injection MOCVD

Published:2024-03-15 Issue: Volume: Page:12
ISSN:
Container-title:Oxide-based Materials and Devices XV
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Author:

Gucmann Filip,Tapajna Milan,Hušeková Kristína,Dobrocka Edmund,Rosová Alica,Nádaždy Peter,Eliáš Peter,Egyenes Fridrich,Hrubišák Fedor,Chouhan Hemendra,Keshtkar Javad,Zheng Xiang,Pomeroy James W.,Kuball Martin,Xiao Xinglin,Mao Yali,Meng Biwei,Ma Guoliang,Yuan Chao

Publisher

SPIE

Reference18 articles.

1. A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga₂O₃, Al₂O₃, In₂O₃, ZnO, SnO₂, CdO, NiO, CuO, and Sc₂O₃

2. IEEE Electron Device Letters

3. M-Plane α-Ga₂O₃ Solar-Blind Detector With Record-High Responsivity-Bandwidth Product and High-Temperature Operation Capability

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