Author:
Hossain Fazla R. M.,Ambadi Satheesh,Winer Richard,Kitt Ken,Garcia Carlos,Pearse Jeff
Cited by
1 articles.
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1. Tungsten and tungsten silicide (WSi/sub x/) as gate materials for trench MOSFETs;12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)