<title>MBE growth of HgCdTe IR detector structures on Si substrates: recent advances and future prospects

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MBE growth of HgCdTe IR detector structures on Si substrates: recent advances and future prospects

Published:1996-10-22 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

de Lyon Terence J.,Rajavel Rajesh D.,Jensen John E.,Wu Owen K.,Vigil J. A.,Johnson Scott M.,Cockrum Charles A.,Venzor G. M.

Publisher

SPIE

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Excess dark currents in HgCdTe p+-n junction diodes;Semiconductor Science and Technology;2001-04-12

2. Comparison of surface morphologies of HgCdTe films grown by MBE and LPE;Fourth International Conference on Thin Film Physics and Applications;2000-11-29

3. Heterostructure infrared photovoltaic detectors;Infrared Physics & Technology;2000-08

4. MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress;Journal of Electronic Materials;1999-06

5. Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications;Journal of Electronic Materials;1998-06

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