1300-nm wafer-fused VCSELs with InGaAs/InAlGaAs superlattice-based active region-Reference-Cited by-同舟云学术

1300-nm wafer-fused VCSELs with InGaAs/InAlGaAs superlattice-based active region

Published:2022-03-03 Issue: Volume: Page:
ISSN:
Container-title:Vertical-Cavity Surface-Emitting Lasers XXVI
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Author:

Blokhin Sergey A.,Ledentsov Nikolay,Rochas Stanislav S.,Babichev Andrey V.,Gladyshev Andrey G.,Chorchos Lukasz,Makarov Oleg Y.,Karachinsky Leonid Ya,Novikov Innokenty I.,Blokhin Alexey A.,Bobrov Mikhail A.,Maleev Nikolay A.,Andryushkin Vladislav V.,Voropaev Kirill O.,Zhumaeva Irina O.,Ustinov Victor M.,Egorov Anton Yu.,Ledentsov Nikolay N.

Publisher

SPIE

Reference22 articles.

1. Recent Advances of VCSEL Photonics

2. All-epitaxial InAlGaAs-InP VCSELs in the 1.3-1.6-/spl mu/m wavelength range for CWDM band applications

3. Long-wavelength VCSELs: The case for all-epitaxial approaches;Coldren,2000

4. High power and low resistive GaInNAs-VCSELs with buried tunnel junctions;Onishi,2008

5. Efficient CW lasing and high-speed Modulation of 1.3-μm AlGaInAs VCSELs with good high temperature lasing performance

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3. 20-Gbps 1300-nm range wafer-fused vertical-cavity surface-emitting lasers with InGaAs/InAlGaAs superlattice-based active region;Optical Engineering;2022-09-20

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