20 Gbit/s error free transmission with ~850 nm GaAs-based vertical cavity surface emitting lasers (VCSELs) containing InAs-GaAs submonolayer quantum dot insertions-Reference-Cited by-同舟云学术

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20 Gbit/s error free transmission with ~850 nm GaAs-based vertical cavity surface emitting lasers (VCSELs) containing InAs-GaAs submonolayer quantum dot insertions

Published:2009-02-12 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Lott J. A.,Shchukin V. A.,Ledentsov N. N.,Stinz A.,Hopfer F.,Mutig A.,Fiol G.,Bimberg D.,Blokhin S. A.,Karachinsky L. Y.,Novikov I. I.,Maximov M. V.,Zakharov N. D.,Werner P.

Publisher

SPIE

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review on Single-Mode Vertical-Cavity Surface-Emitting Lasers for High-Speed Data Transfer;Reviews on Advanced Materials and Technologies;2022

2. Sample Preparation For VCSEL Device Contamination Analysis;2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2021-09-15

3. Photoluminescence tuning of stacked submonolayer (SML) InAs nanostructures across the 2D to 3D transition;Applied Physics Letters;2021-05-03

4. Generation of Two-Channel Broadband Optical Frequency Comb Using Gain-Switched 850 nm-VCSEL Under Orthogonal Optical Injection;Chinese Journal of Lasers;2020

5. VCSEL-Based Silicon Photonic Interconnect Technologies;Semiconductor Nanophotonics;2020

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