Emitted beam stabilization in junction plane by lateral periodic structure in laser diodes emitting at 980 nm-Reference-Cited by-同舟云学术

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Emitted beam stabilization in junction plane by lateral periodic structure in laser diodes emitting at 980 nm

Published:2018-12-04 Issue: Volume: Page:
ISSN:
Container-title:Laser Technology 2018: Progress and Applications of Lasers
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Author:

Dąbrowska Elżbieta,Teodorczyk Marian,Malag Andrzej,Sobczak Grzegorz

Publisher

SPIE

Reference16 articles.

1. Lateral coherence properties of broad-area semiconductor quantum well lasers;Larsson;JAP,1986

2. Filamentation in conventional double heterostructure and quantum well semiconductor lasers

3. Spatial mode structure of index-guided broad-area quantum-well lasers

4. Low confinement factors for suppressed filaments in semiconductor lasers

5. Successive phase change and stability of near-field patterns for broad-area laser diodes;Asatsuma,2006

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1. Improved Far-Field Angle in Narrow-Ridge High-Power Laser Diodes Using a Double Stripe Structure;IEEE Photonics Journal;2023-12

2. Recent advances in lateral mode control technology of diode lasers;Chinese Optics;2022

3. Loss tailoring of high-power broad-area diode lasers;Optics Letters;2019-07-12

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