Application of actinic mask review system for the preparation of HVM EUV lithography with defect free mask-Reference-Cited by-同舟云学术

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Application of actinic mask review system for the preparation of HVM EUV lithography with defect free mask

Published:2017-03-28 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Na Jihoon¹,Lee Donggun¹,Do Changhwan¹,Sim Hong-seok¹,Lee Jung-Hwan¹,Kim Jungyoup¹,Seo Hwan-Seok¹,Kim Heebom¹,Jeon Chan Uk¹

Affiliation:

1. SAMSUNG Electronics Co., Ltd. (Korea, Republic of)

Publisher

SPIE

Reference15 articles.

1. EUV Progress Toward HVM Readiness;Britt,2016

2. Commissioning an EUV mask microscope for lithography generations reaching 8 nm;Goldberg,2013

3. Development of actinic full-field EUV mask blank inspection tool at MIRAI-Selete;Terasawa,2009

4. Actinic Review of EUV Masks: Performance Data and Status of the AIMSTM EUV System;Dirk,2016

5. Investigation of Aerial Imaging Performance of EUV Mask Using a Samsung EMDRS;Jongju,2014

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 超快极紫外光源产生及其在半导体检测中的应用（特邀）;Acta Optica Sinica;2024

2. Actinic patterned mask imaging using extreme ultraviolet ptychography microscope with high harmonic generation source;Applied Physics Express;2022-06-17

3. Source performance metrics for EUV mask inspection;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-03-08

4. Improved ptychographic inspection of EUV reticles via inclusion of prior information;Applied Optics;2020-07-06

5. Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope;Journal of Micro/Nanolithography, MEMS, and MOEMS;2019-09-28

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