Characterization of promising resist platforms for sub-30-nm HP manufacturability and EUV CAR extendibility study-Reference-Cited by-同舟云学术

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Characterization of promising resist platforms for sub-30-nm HP manufacturability and EUV CAR extendibility study

Published:2010-03-11 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Koh Chawon,Georger Jacque,Ren Liping,Huang George,Goodwin Frank,Wurm Stefan,Ashworth Dominic,Montgomery Warren,Pierson Bill,Park Joo-on,Naulleau Patrick

Publisher

SPIE

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multinuclear Tin-Based Macrocyclic Organometallic Resist for EUV Photolithography;ACS Materials Au;2024-03-27

2. Organometallic and coordinative photoresist materials for EUV lithography and related photolytic mechanisms;Coordination Chemistry Reviews;2023-10

3. Precise CD-SEM metrology of resist patterns at around 20 nm for 0.33NA EUV lithography;Metrology, Inspection, and Process Control for Microlithography XXVIII;2014-04-02

4. Study of Interrelation Between Reaction of Polymer-Bound/Blend Photoacid Generator with Solvated Electron and Acid Generation Efficiency;Japanese Journal of Applied Physics;2013-06-01

5. Theoretical study of deprotonation of polymer radical cation for EUV resist;SPIE Proceedings;2013-03-29

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