Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications-Reference-Cited by-同舟云学术

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Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications

Published:2022-01-31 Issue: Volume: Page:
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Container-title:International Conference on Micro- and Nano-Electronics 2021
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Author:

Volodin Vladimir A.,Krivyakin Gregoriy K.,Bulgakov Alexander V.,Levy Yoann,Beránek Jiri,Nagisetty Shiva,Bryknar Zdenek,Bulgakova Nadezhda M.,Geydt Pavel V.,Popov Aleksandr A.

Publisher

SPIE

Reference25 articles.

1. Anisotropy of optical, electrical, and photoelectrical properties of amorphous hydrogenated silicon films modified by femtosecond laser irradiation

2. Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles”. Eur. Phys;Remes;J. Appl. Phys.,2019

3. Nanocrystalline germanium nip solar cells with spectral sensitivities extending into 1450 nm

4. Germanium and tin nanoparticles encapsulated in amorphous silicon matrix for optoelectronic applications;Stuchlikova,2018

5. Resistive Switching in Memristors Based on Ag/Ge/Si Heterostructures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single-shot selective femtosecond and picosecond infrared laser crystallization of an amorphous Ge/Si multilayer stack;Optics & Laser Technology;2023-06

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