Hydride VPE: the unexpected process for the fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure-Reference-Cited by-同舟云学术

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Hydride VPE: the unexpected process for the fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure

Published:2013-12-07 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

André Yamina,Trassoudaine Agnès,Avit Geoffrey,Lekhal Kaddour,Ramdani Mohammed R.,Leroux Christine,Monier Guillaume,Varenne Christelle,Hoggan Philip,Castelluci Dominique,Bougerol Catherine,Réveret François,Leymarie Joël,Petit Elodie,Dubrovskii Vladimir G.,Gil Evelyne

Publisher

SPIE

Reference56 articles.

1. Directed Assembly of One-Dimensional Nanostructures into Functional Networks

2. Growth of nanowire superlattice structures for nanoscale photonics and electronics

3. Tunable Supercurrent Through Semiconductor Nanowires

4. Nanoelectronics from the bottom up

5. Nanowire photonics

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