Latest developments of 10μm pitchHgCdTediode array from the legacy to the extrinsic technology-Reference-Cited by-同舟云学术

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Latest developments of 10μm pitchHgCdTediode array from the legacy to the extrinsic technology

Published:2016-05-20 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Infrared Technology and Applications XLII
language:
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Author:

Péré-Laperne Nicolas,Berthoz Jocelyn,Taalat Rachid,Rubaldo Laurent,Kerlain Alexandre,Carrère Emmanuel,Dargent Loïc

Publisher

SPIE

Reference14 articles.

1. Electrical doping of HgCdTe by ion implantation and heat treatment;Destéfanis,1988

2. Latest developments on p-on-n HgCdTe architectures at DEFIR;Castelein,2014

3. Large format InSb infrared MTF issues 10μm with pixels;Gershon,2014

4. Update on 10μm pixel pitch MCT-based focal plane array with enhanced functionalities;Reibel,2015

5. Calculation of intrinsic carrier concentration in HgCdTe;Hansen,1983

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