Nonradiative recombination and efficiency of InGaN quantum well light-emitting diodes
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SPIE
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescence peculiarities of epitaxial structure with 2DEG layer designed for microwave detectors;Applied Physics A;2018-10-09
2. Influence of temperature on different optoelectronic characteristics of InGaN light emitting diodes;Optical and Quantum Electronics;2017-07-14
3. Studies on the Effect of Temperature on Electroluminescence, Current–Voltage, and Carrier Lifetimes Characteristics in a InGaN/Sapphire Purple Light Emitting Diode;Journal of Electronic Materials;2016-01-11
4. Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities;Applied Physics Letters;2009-03-16
5. Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics;Applied Physics Letters;2006-10-23
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