Growth and characterization of very long wavelength type-II infrared detectors-Reference-Cited by-同舟云学术

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Growth and characterization of very long wavelength type-II infrared detectors

Published:2000-04-13 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Mohseni Hooman,Tahraoui Abbes,Wojkowski Joseph S.,Razeghi Manijeh,Mitchel W. C.,Saxler Adam W.

Publisher

SPIE

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modelization of electrical and optical characteristics of short-wave infrared type I InGaAsBi/InGaAs/InP quantum wells p-i-n detector;Physica Scripta;2020-12-29

2. Molecular Beam Epitaxy of GaSb on GaAs Substrates with Compositionally Graded LT-GaAs x Sb 1- x Buffer Layers;Chinese Physics Letters;2017-01

3. Performance analysis of an N-structure type-II superlattice photodetector for long wavelength infrared applications;Journal of Alloys and Compounds;2016-11

4. Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers;AIP Advances;2015-09

5. Rapid Thermal Annealing on GaSb Thin Films Grown by Molecular Beam Epitaxy on GaAs Substrates;Advanced Materials Research;2013-09

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