Ultrahigh efficiency EUV contact-hole printing with chromeless phase shift mask

Author:

Naulleau Patrick,Anderson Christopher N.,Chao Weilun,Goldberg Kenneth A.,Gullikson Eric,Salmassi Farhad,Wojdyla Antoine

Publisher

SPIE

Reference9 articles.

1. EUV lithography performance for manufacturing: status and outlook;Alberto,2016

2. EUV progress toward HVM readiness;Britt,2016

3. Performance optimization of MOPA pre-pulse LPP light source;A.,2015

4. Status of EUV microexposure capabilities at the ALS using the 0.3-NA MET optic;P.,2004

5. The SEMATECH Berkeley MET: demonstration of 15-nm half-pitch in chemically amplified EUV resist and sensitivity of EUV resists at 6.x-nm;C.,2012

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1. Quadriwave lateral shearing phase imaging of EUV masks;Extreme Ultraviolet Lithography 2020;2020-10-16

2. Perspectives and tradeoffs of absorber materials for high NA EUV lithography;Journal of Micro/Nanolithography, MEMS, and MOEMS;2020-10-01

3. Algebraic model for extremely unlikely resist dissolution events;Advances in Patterning Materials and Processes XXXVII;2020-03-24

4. Performance of Extreme Ultraviolet Coherent Scattering Microscope;Journal of Nanoscience and Nanotechnology;2019-10-01

5. Studying resist performance for contact holes printing using EUV interference lithography;Journal of Micro/Nanolithography, MEMS, and MOEMS;2019-01-14

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