Hydrogenated amorphous silicon based p-i-n structures with Si and Ge nanocrystals in i-layers-Reference-Cited by-同舟云学术

Hydrogenated amorphous silicon based p-i-n structures with Si and Ge nanocrystals in i-layers

Published:2016-12-30 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Volodin V. A.¹,Krivyakin G. K.¹,Shklyaev A. A.¹,Kochubei S. A.¹,Kamaev G. N.¹,Dvurechendkii A. V.¹,Purkrt A.²,Remes Z.²,Fajgar R.³,Stuchliková T. H.⁴,Stuchlik J.⁴

Affiliation:

1. A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)

2. Institute of Physics ASCR v. v. i. (Czech Republic)

3. Institute of Chemical Process Fundamentals of the ASCR, v. v. i. (Czech Republic)

4. Institute of Physics ASCR, v. v. i. (Czech Republic)

Publisher

SPIE

Reference24 articles.

1. Silicon quantum dot nanostructures for tandem photovoltaic cells

2. Growth, structure, optical and electrical properties of Si/2D Mg2Si/Si(111) double heterostructures and Schottky diodes on their base

3. Formation and properties of p–i–n diodes based on hydrogenated amorphous silicon with embedded CrSi, MgSi and CaSi nanocrystallites for energy conversion applications;Galkin,2015

4. Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

5. Narrow Luminescence Linewidth of a Silicon Quantum Dot

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