Metrology of undoped double-sided polished silicon wafer: surface, thickness and refractive index profile measurements-Reference-Cited by-同舟云学术

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Metrology of undoped double-sided polished silicon wafer: surface, thickness and refractive index profile measurements

Published:2014-05-01 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Optical Micro- and Nanometrology V
language:
Short-container-title:

Author:

Lee Ho-Jae,Joo Ki-Nam

Publisher

SPIE

Reference16 articles.

1. Noncontact surface profiling using a novel capacitive technique: scanning capacitance microscopy;Bugg,1992

2. A new stylus instrument with a wide dynamic range for use in surface metrology

3. A scanning wafer thickness and flatness interferometer;Jansen,2004

4. Development of a double sided stitching interferometer for wafer characterization

5. Silicon wafer thickness variation measurements using the National Institute of Standards and Technology infrared interferometer

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simultaneous Measurement of Thickness and Group Refractive Index Based on Differential White Light Interferometry;IEEE Transactions on Instrumentation and Measurement;2023

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