Wafer edge overlay control solution for N7 and beyond-Reference-Cited by-同舟云学术

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Wafer edge overlay control solution for N7 and beyond

Published:2018-03-20 Issue: Volume: Page:
ISSN:
Container-title:Advanced Etch Technology for Nanopatterning VII
language:
Short-container-title:

Author:

van Haren Richard J. F.,Hermans Jan,Kumar Kaushik,Yamashita Fumiko,Calado Victor,van Dijk Leon

Publisher

SPIE

Reference5 articles.

1. Wafer-shape based in-plane distortion predictions using Superfast 4G metrology;van Dijk,2017

2. Toward 7 nm target on product overlay for C028 FDSOI technology;Gatefait,2013

3. Overlay leaves litho: impact of non-litho processes on overlay and compensation;Ruhm,2014

4. Reducing the impact of etch-induced pattern shift on overlay by using lithography and etch tool corrections;Kubis,2017

5. Ion energy and angular distributions into small features in plasma etching reactors: the wafer-focus ring gap;Babaeva,2007

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mitigation of the etch-induced intra-field overlay contribution;Advanced Etch Technology and Process Integration for Nanopatterning XI;2022-05-25

2. The mask contribution as part of the intra-field on-product overlay performance;Photomask Technology 2020;2020-10-12

3. Influence of e-beam aperture angle on critical dimensions-scanning electron microscopes measurements for high aspect ratio structure;Journal of Micro/Nanolithography, MEMS, and MOEMS;2019-04-06

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