Fast integral rigorous modeling applied to wafer topography effect prediction on 2x nm bulk technologies-Reference-Cited by-同舟云学术

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Fast integral rigorous modeling applied to wafer topography effect prediction on 2x nm bulk technologies

Published:2014-03-31 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Michel J.-C.,Le Denmat J.-C.,Tishchenko A.,Jourlin Y.

Publisher

SPIE

Reference7 articles.

1. Reduction of reflection notching through illumination optimization;Word,2002

2. Stack effect implementation in OPC and mask verification for production environment;Sungauer,2012

3. Wafer topography modeling for ionic implantation mask correction dedicated to 2x nm nodes on FDSOI substrate;Michel,2013

4. Wafer sub-layer impact in OPC/ORC models for advanced node implant layers;Le-Denmat,2014

5. Full chip implant correction with wafer topography OPC modeling in 2x nm bulk technologies

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fin field effect transistor directionality impacts printing of implantation shapes;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-01-25

2. FinFET-induced anisotropy in printing of implantation shapes;SPIE Proceedings;2017-03-17

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