Design and performance of photoresist materials for ArF lithography-Reference-Cited by-同舟云学术

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Design and performance of photoresist materials for ArF lithography

Published:2001-08-24 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Kim Hyun-Woo,Jung Dong-Won,Lee Sook,Choi Sang-Jun,Woo Sang-Gyun,Kavanagh Robert J.,Barclay George G.,Blacksmith Robert F.,Kang Doris,Pohlers Gerd,Cameron James F.,Mattia Joe,Caporale Stefan,Penniman Thomas,Joesten Lori A.,Thackeray James W.

Publisher

SPIE

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Present and future of 193nm lithography;Microelectronic Engineering;2006-04

2. Design and Performance of EUV Resist Containing Photoacid Generator for Sub-100 nm Lithography;Journal of Nanoscience and Nanotechnology;2005-07-01

3. Design restrictions for patterning with off-axis illumination;Optical Microlithography XVIII;2005-05-12

4. Newly developed polymer bound photoacid generator resist for sub-100-nm pattern by EUV lithography;SPIE Proceedings;2005-05-04

5. New resists for nanometer scale patterning by extreme ultraviolet lithography;Journal of Micro/Nanolithography, MEMS, and MOEMS;2005-04-01

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