Hg3In2Te6-based radiation and temperature stable photodetectors-Reference-Cited by-同舟云学术

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Hg3In2Te6-based radiation and temperature stable photodetectors

Published:2018-09-18 Issue: Volume: Page:
ISSN:
Container-title:Infrared Sensors, Devices, and Applications VIII
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Author:

Gnatyuk Volodymyr A.,Sklyarchuk Valery M.,Aoki Toru

Publisher

SPIE

Reference19 articles.

1. History of infrared detectors

2. Photoelectric properties of polycrystalline films grown on alternative substrates

3. Influence of stoichiometric vacancies on the top of valance band in solid solutions (In2Te3)x-(Hg3Te3)1-x;Domashevskaya,1991

4. Self-calibrated radiometric IR photodiode based on defect semiconductor Hg3In2Te6 for the spectral range 0.85-1.5 μm;Malik,1990

5. Electrical properties of the intrinsic Hg3In2Te6 semiconductor;Grushka,1985

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrophysical properties of photosensors based on radiation-resistant Hg2MnInTe6 crystals;Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIV;2022-10-04

2. Schottky Diode Detectors with Low Leakage Current at High Operating Voltage;Lecture Notes in Networks and Systems;2020

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