Author:
Jiang Chunsheng,Xin Xingchen,Chen Hongying
Reference22 articles.
1. The emerging phase change memory
2. Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation;Ielmini;Proc. 53th Int. Electron Devices Meet,2007
3. Electronic switching effect in phase-change memory cells
4. A New Transient Model for Recovery and Relaxation Oscillations in Phase-Change Memories