Variable temperature carrier dynamics in bulk (In)GaAsNSb materials grown by MOVPE for multi-junction solar cells-Reference-Cited by-同舟云学术

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Variable temperature carrier dynamics in bulk (In)GaAsNSb materials grown by MOVPE for multi-junction solar cells

Published:2014-03-07 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Sin Yongkun,Lingley Zachary,LaLumondiere Stephen,Wells Nathan,Lotshaw William,Moss Steven C.,Kim Tae Wan,Mawst Luke J.,Kuech Thomas F.

Publisher

SPIE

Reference7 articles.

1. 43.5% efficient lattice matched solar cells;Wiemer,2011

2. Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy

3. Carrier dynamics in MOVPE-grown bulk dilute nitride materials for multi-junction solar cells;Sin,2011

4. Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy

5. Optimization of annealing conditions of (GaIn)(NAs) for solar cell applications

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoelectric Property Improvement of 1.0-eV GaInNAs and Applications in Lattice-Matched Five-Junction Solar Cells;Chinese Physics Letters;2018-07

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