1. Sematech Organization , www.sematech.org/meetings/announcements/8285.
2. V. Bakshi ,EUV Sources for Lithography, pp. 4–8, SPIE Press, Bellingham, WA (2006).
3. G. Denbeaux, Y.-J. Fan, A. Antohe, L. Yankulin, R. Garg, O. Wood, F. Goodwin, C.-S. Koay, K. Goldberg, E. Anderson, and W. Chao , “Actinic microscope for EUV masks using a Stand-Alone Source for Imaging and Contamination Studies of EUV masks,” presented at Session of Optics and Metrology, 2007 International Extreme Ultraviolet Lithography (EUVL) Symposium, 29–31 October 2007, Sapporo, Japan, Presentation Number ME-02.
4. A. Wuest and K. Dean , “Implications of EUV optics lifetime and contamination mitigation studies,” presented at Session of Contamination and Cleanness, 2007 International Extreme Ultraviolet Lithography (EUVL) Symposium, 29–31 October 2007, Sapporo, Japan, Presentation Number CC-P04.
5. M. Goldstein, S. H. Lee, Y. A. Shroff, P. J. Silverman, D. Williams, H. Park, M. A. Piestrup, and R. H. Pantell , “FEL applications in EUV lithography,” presented at 27th International Free Electron Laser Conference, 21–26 August 2005, Stanford, CA, Paper No. C0508213.