High-performance 1300-nm InAs/GaAs quantum-dot lasers
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SPIE
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quantum-Dot Lasers: Physics and Applications;Reference Module in Materials Science and Materials Engineering;2016
2. Theoretical optimization of multi-layer InAs/GaAs quantum dots subject to post-growth thermal annealing for tailoring the photoluminescence emission beyond 1.3 μm;Journal of Applied Physics;2012-07-15
3. Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures;Applied Physics Letters;2012-01-16
4. An approach to suppress the blue-shift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post-growth annealing;Materials Research Bulletin;2010-10
5. Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique;Nanoscale Research Letters;2009-09-19
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