Actinic inband EUV reflectometry AIMER compared to ALS blank qualification and applied to structured masks-Reference-Cited by-同舟云学术

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Actinic inband EUV reflectometry AIMER compared to ALS blank qualification and applied to structured masks

Published:2019-03-26 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography X
language:
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Author:

Biermanns-Foeth Andreas,Phiesel Christoph,Missalla Thomas,Arps Jennifer,Piel Christian,Lebert Rainer

Publisher

SPIE

Reference6 articles.

1. AIMER™: full reticle area, scanner-effective EUV mapping reflectometry;Biermanns-Föth,2018

2. EUV lithography insertion for high volume manufacturing: Status and outlook;Chen,2017

3. Progress on EUV pellicle development;Zoldesi,2014

4. Progress on EUV pellicle development;Zoldesi,2014

5. Lebert R., Aschke L., Heim U., Juschkin L. Reflectometer arrangement and method for determining the reflectance of selected measurement locations of measurement objects reflecting in a spectrally dependent manner (Reflektometeranordnung und Verfahren zur Bestimmung des Reflexionsvermögens eines Messobjekts), Patent DE50213860 D1, DE10119072 C1, US6856395 B2

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