Room temperature performance of InAs-GaAs quantum dot laser emitting at 1.3 µm-Reference-Cited by-同舟云学术

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Room temperature performance of InAs-GaAs quantum dot laser emitting at 1.3 µm

Published:2019-10-16 Issue: Volume: Page:
ISSN:
Container-title:Seventh International Conference on Optical and Photonic Engineering (icOPEN 2019)
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Author:

GUPTA NITIKA,Yalashetty Arvind,Sharma Abhishek,Jain Alok,Dhirhe Devnath

Publisher

SPIE

Reference18 articles.

1. Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

2. Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities

3. Pattern-effect-free semiconductor optical amplifier achieved using quantum dots

4. Quantum dot laser diode with low threshold and low internal loss

5. Optical characteristics of 1.24-μm InAs quantum-dot laser diodes

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Built‐In Electric Field on the Emission Characteristics of InAs/GaAs Quantum Dot Laser Structure;physica status solidi (b);2021-05-20

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