New alignment mark design structures for higher diffraction order wafer quality enhancement-Reference-Cited by-同舟云学术

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New alignment mark design structures for higher diffraction order wafer quality enhancement

Published:2017-03-28 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Zhang Libin¹,Feng Yaobin²,Dong Lisong¹,Su Xiaojing¹,Tian Zhengguo²,Fang Chao²,Wei Yayi¹,Ye Tianchun¹

Affiliation:

1. Institute of Microelectronics (China)

2. Yangtze River Storage Technology (YMTC) (China)

Publisher

SPIE

Reference8 articles.

1. Experimental study of Talbot imaging moiré-based lithography alignment method

2. Wafer quality analysis of various scribe line mark designs;Zhou,2011

3. A comparison of alignment and overlay performance with varying hardmask materials;Yun,2012

4. Novel ATHENA mark design to enhance alignment quality in double patterning with spacer process;Chen,2010

5. The alignment performance study for the gate layer in FinFet processes;Li,2016

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1. Balance between the diffraction efficiency and process robustness for plasmonic lithographic alignment technology considering the Fabry–Perot resonator effect;Applied Optics;2023-05-10

2. Evolution in Lithography Techniques: Microlithography to Nanolithography;Nanomaterials;2022-08-11

3. 共振域相位光栅标记设计方法;Acta Optica Sinica;2022

4. Analytic Design of Segmented Phase Grating for Optical Sensing in High-Precision Alignment System;Sensors;2021-05-31

5. Reducing the absorbance of a high etch resistant spin-on carbon hardmask;Advances in Patterning Materials and Processes XXXVIII;2021-02-22

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