Intensity and phase fields behind phase-shifting masks studied with high-resolution interference microscopy-Reference-Cited by-同舟云学术

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Intensity and phase fields behind phase-shifting masks studied with high-resolution interference microscopy

Published:2016-01-29 Issue:2 Volume:15 Page:021203
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Puthankovilakam Krishnaparvathy¹,Scharf Toralf¹,Kim Myun Sik¹,Naqavi Ali¹,Herzig Hans Peter¹,Weichelt Tina²,Zeitner Uwe³,Vogler Uwe⁴,Voelkel Reinhard⁴

Affiliation:

1. Optics and Photonics Technology Laboratory, Ecole Polytechnique Fédérale de Lausanne, Rue de la Maladière 71b, CH-2002 Neuchâtel, Switzerland

2. Friedrich-Schiller-Universität Jena, Institute of Applied Physics, Abbe Center of Photonics, D-07743 Jena, Germany

3. Friedrich-Schiller-Universität Jena, Institute of Applied Physics, Abbe Center of Photonics, D-07743 Jena, GermanycFraunhofer Institute for Applied Optics and Precision Engineering, D-07745 Jena, Germany

4. SUSS MicroOptics SA, Rouges-Terres 61, 2068 Hauterive, Switzerland

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Optical lithography--thirty years and three orders of magnitude: the evolution of optical lithography tools

2. Recents trends in optical lithography;Rothschild,2003

3. Pushing the limits of lithography

4. Difffraction effects in submicron contact or proximity printing

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