30-nm half-pitch metal patterning using Motif™ critical dimension shrink technique and double patterning

Author:

Versluijs Janko

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Double patterning scheme for sub-0.25 k1 single damascene structures at NA=0.75, λ=193nm

2. V. Wiaux, J. Bekaert, E. Hendrickx, S. Verhaegen, G. Vandenberghe, S. Locorotondo, S. Beckx, J. Finders, and M. Dusa , 193 nm immersion lithography towards 32 nm hp using double patterning, 3rd Int. Symp. on Immersion Lithography, Kyoto, Oct. 2–5, 2006.

3. Manufacturability issues with double patterning for 50-nm half-pitch single damascene applications using RELACS shrink and corresponding OPC

4. Strategy for sub-80-nm contact hole patterning considering device fabrication

5. Evaluation of process-based resolution enhancement techniques to extend 193-nm lithography

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