Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate-Reference-Cited by-同舟云学术

Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate

Published:2018-08-14 Issue: Volume: Page:
ISSN:
Container-title:13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods
language:
Short-container-title:

Author:

Wróbel Jarosław,Grodecki Kacper,Benyahia Djalal,Boguski Jacek,Murawski Krzysztof,Michalczewski Krystian,Grzonka Justyna,Umana-Membreno Gilberto,Kubiszyn Łukasz,Kębłowski Artur,Michałowski Paweł Piotr P.,Gomółka Emilia,Martyniuk Piotr,Piotrowski Józef,Rogalski Antoni,Gorczyca Kinga

Publisher

SPIE

Reference23 articles.

1. Molecular Beam Epitaxial Growth of InAs

2. First stages of the MBE growth of InAs on (001)GaAs

3. Infrared detectors: status and trends

4. Strain relaxation in the growth of planar InAs

5. Proposal for strained type II superlattice infrared detectors

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantification of microstructural homogeneity in indium arsenide epilayers by X-ray diffraction;Metrology and Measurement Systems;2024-08-19

2. Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern;Opto-Electronics Review;2024-01-03

3. Investigation of 1/f noise sources with the coherence function;Measurement;2023-06

4. Badania jednorodności cienkich warstw InAs otrzymywanych metodą epitaksji z wiązek molekularnych;PRZEGLĄD ELEKTROTECHNICZNY;2022-01-04

5. Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs;physica status solidi (RRL) – Rapid Research Letters;2020-04