High sensitivity InAs photodiodes for mid-infrared detection-Reference-Cited by-同舟云学术

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High sensitivity InAs photodiodes for mid-infrared detection

Published:2016-10-21 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Electro-Optical Remote Sensing X
language:
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Author:

Ng Jo Shien¹,Zhou Xinxin¹,Auckloo Akeel¹,White Benjamin¹,Zhang Shiyong¹,Krysa Andrey¹,David John P. R.¹,Tan Chee Hing¹

Affiliation:

1. The Univ. of Sheffield (United Kingdom)

Publisher

SPIE

Reference10 articles.

1. Multiplication noise in uniform avalanche diodes

2. The HgCdTe electron avalanche photodiode

3. A low-noise laser-gated imaging system for long-range target identification;Baker,2004

4. Excess Avalanche Noise in $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$

5. Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dark current and 1/f noise in forward biased InAs photodiodes;Semiconductor Physics, Quantum Electronics and Optoelectronics;2021-11-23

2. High-performance mid-wavelength InAs avalanche photodiode using AlAs013Sb087 as the multiplication layer;Photonics Research;2020-04-30

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