Ultrathin EUV patterning stack using polymer brush as an adhesion promotion layer-Reference-Cited by-同舟云学术

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Ultrathin EUV patterning stack using polymer brush as an adhesion promotion layer

Published:2017-03-24 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Seshadri Indira¹,De Silva Anuja¹,Meli Luciana¹,Liu Charlie¹,Chi Cheng¹,Guo Jing¹,Schmidt Kristin¹,Schmidt Kristin¹,Truang Hoa¹,Arnold John C.¹,Felix Nelson¹,Singh Lovejeet²,Furukawa Tsuyoshi²,Ayothi Ramakrishnan²,Raley Angelique³,Farrell Richard³

Affiliation:

1. IBM Semiconductor Technology Research (United States)

2. JSR Micro, Inc. (United States)

3. TEL Technology Ctr., America, LLC (United States)

Publisher

SPIE

Reference12 articles.

1. EUV processing and characterization for BEOL;Saulnier,2015

2. EUV patterning successes and frontiers;Felix,2016

3. EUV resist requirements: absorbance and acid yield;Gronheid,2009

4. Performance of tri-layer process required for 22 nm and beyond;Wei,2011

5. The novel spin-on hard mask and ultrathin UL material for EUVL;Sakamoto,2012

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel assist layers to enhance EUV lithography performance of photoresists on different substrates;Advances in Patterning Materials and Processes XL;2023-05-01

2. EUV single exposure via patterning at aggressive pitch;Extreme Ultraviolet (EUV) Lithography XII;2021-02-24

3. Adhesion improvement of photoresist: destruction mode analysis;Advances in Patterning Materials and Processes XXXVII;2020-03-23

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