193nm inspection of extreme ultraviolet mask absorber defect-Reference-Cited by-同舟云学术

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193nm inspection of extreme ultraviolet mask absorber defect

Published:2014-04-17 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Kim Guk-Jin¹,Kim In-Seon¹,Yeung Michael²,Lim Chang-Moon³,Oh Hye-Keun¹

Affiliation:

1. Hanyang Univ. (Korea, Republic of)

2. Fastlitho Inc. (United States)

3. SK Hynix Semiconductor Inc. (Korea, Republic of)

Publisher

SPIE

Reference6 articles.

1. EUV actinic defect inspection and defect printability at the sub-32-nm half-pitch

2. Study of EUVL mask defect inspection using 199-nm inspection tool with super-resolution method

3. Evaluation of novel EUV mask inspection technologies

4. EUVL mask inspection using 193nm wavelength for 30nm node and beyond

5. EUV mask inspection with 193 nm inspector for 32 and 22 nm HP

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