Leveraging data analytics, patterning simulations and metrology models to enhance CD metrology accuracy for advanced IC nodes

Author:

Rana Narender,Zhang Yunlin,Kagalwala Taher,Hu Lin,Bailey Todd

Publisher

SPIE

Reference6 articles.

1. Williams, R.H., Hawkins, C.F., “Economic Considerations in Tolerance Design,” International Test Conference, 73–9, (1994)

2. Time-dependent electron-beam-induced photoresist shrinkage effects

3. Photoresist Shrinkage Effects in 16 nm Node Extreme Ultraviolet (EUV) Photoresist Targets;Bundey,2013

4. Quantitative CD-SEM Resist Shrinkage Study and Its Application for Accurate CD-SEM Tools’ Matching;Li,2013

5. Experimental validation of 2-D profile photoresist shrinkage model;Bundey,2011

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