Analysis of the influence of technological parameters on electrophysical and frequency characteristics of RF MEMS

Author:

Belevtsev Andrei M.,Epaneshnikova Irina K.,Kruchkov Vasiliy L.,Dryagin Ivan O.,Lukichev Vladimir F.,Boldyreff Anton S.

Publisher

SPIE

Reference10 articles.

1. The Method for Designing the Topology of the RF MEMS Switch About

2. Maltsev P. P., Pavlov. A. Yu., Sevruk B. V. / Design and fabrication of narrow-band microwave microelectromechanical switch for frequency 10-12 GHz on gallium arsenide substrates. // Nano-and Microsystem technology-2014. - No. 6

3. Reduced height RF MEMS for low GHz frequencies;Bandana,2011

4. Belevtsev A. M., Dryagin I. O., Alferova M. S., Razbash R. V./ The advantages of RF MEMS switches over a modern solid-state switches //Gagarin readings – 2018: youth XLIV international scientific conference: book of abstracts: M.; Moscow Aviation Institute (National Research University), 2018. - 417c.

5. Epaneshnikova I. K., Dryagin I. O./ Feature selection for the development of a switch based on MEMS technologies // Gagarin readings – 2017: XLIII International scientific conference: book of abstracts: M.; Moscow Aviation Institute (National Research University), 2017. S. 616–619

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1. Analysis of the Electrophysical Characteristics of the RF MEMS Switch Taking into Account the Influence of the Substrate Material;Russian Microelectronics;2023-12

2. RF MEMS Switch Design and Frequency Characteristics;2023 Radiation and Scattering of Electromagnetic Waves (RSEMW);2023-06-26

3. Electromagnetic Parameters of the Ferrite Materials for Electromagnetic Compatibility;2023 Radiation and Scattering of Electromagnetic Waves (RSEMW);2023-06-26

4. Material selection methodology for RF MEMS switch design;SPIE Future Sensing Technologies 2021;2021-11-17

5. Research of the influence of technological parameters on the electrophysical characteristics of the RF MEMS switch;Millimetre Wave and Terahertz Sensors and Technology XIII;2020-09-29

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