157-nm lithography with high numerical aperture lens for 70-nm technology node-Reference-Cited by-同舟云学术

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157-nm lithography with high numerical aperture lens for 70-nm technology node

Published:2002-07-15 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Suganaga Toshifumi,Kanda Noriyoshi,Kim J.,Yamabe Osamu,Watanabe Kunio,Furukawa Takamitsu,Miyoshi Seiro,Itani Toshiro,Cashmore Julian S.,Gower Malcolm C.

Publisher

SPIE

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 157-nm chromeless phase lithography for 45-nm SRAM gate;SPIE Proceedings;2004-05-28

2. 157-nm lithography with extremely high numerical aperture lens for 45-nm technology node;SPIE Proceedings;2004-05-28

3. Fluorine—an enabler in advanced photolithography;Journal of Fluorine Chemistry;2003-07

4. 157-nm bilayer resist: patterning and etching performance;Advances in Resist Technology and Processing XX;2003-06-11

5. Selete activity of 157-nm lithography and masks;19th European Conference on Mask Technology for Integrated Circuits and Microcomponents;2003-06-02

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