Silicon single atom steps as AFM height standards-Reference-Cited by-同舟云学术

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Silicon single atom steps as AFM height standards

Published:2001-08-22 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Dixson Ronald G.,Orji Ndubuisi G.,Fu Joseph,Tsai Vincent,Williams Ellen D.,Kacker Raghu,Vorburger Theodore V.,Edwards Hal L.,Cook Debra,West Paul E.,Nyffenegger Ralph

Publisher

SPIE

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bottom-Up Generated Height Gauges for Silicon-Based Nanometrology;ACS Applied Materials & Interfaces;2023-02-21

2. Structural and thermodynamic aspects of the evolution of supersmooth surface of oxide crystals;Applied Surface Science;2021-07

3. MEMS displacement generator for atomic force microscopy metrology;Measurement Science and Technology;2021-04-06

4. Step-height standards based on the rapid formation of monolayer steps on the surface of layered crystals;Applied Surface Science;2017-07

5. Study of user influence in routine SPM data processing;Measurement Science and Technology;2017-01-23

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