Advances in modeling emerging magnetoresistive random access memories: from finite element methods to machine learning approaches-Reference-Cited by-同舟云学术

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Advances in modeling emerging magnetoresistive random access memories: from finite element methods to machine learning approaches

Published:2022-01-31 Issue: Volume: Page:
ISSN:
Container-title:International Conference on Micro- and Nano-Electronics 2021
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Author:

Ender Johannes,Fiorentini Simone,Orio Roberto,Hadámek Tomáš,Bendra Mario,Goes Wolfgang,Selberherr Siegfried,Sverdlov Viktor

Publisher

SPIE

Reference35 articles.

1. Scanning the Issue

2. https://irds.ieee.org/editions/2021

3. Perpendicular magnetic recording -Its development and realization-

4. Method of Writing to Scalable Magnetoresistance Random Access Memory Element, US Patent 6545906 B1;Savtchenko,2003

5. Materials with Perpendicular Magnetic Anisotropy for Magnetic Random Access Memory, Phys. Stat. Solidi (RRL) – Rapid Research Letters;Sbiaa,2011

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