First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique-Reference-Cited by-同舟云学术

First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique

Published:2016-03-07 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Majid Mohammed A.¹,Al-Jabr Ahmad A.¹,Elafandy Rami T.¹,Oubei Hassan M.¹,Alias Mohd S.¹,Alnahhas Bayan A.²,Anjum Dalaver H.¹,Ng Tien Khee¹,Shehata Mohamed²,Ooi Boon S.¹

Affiliation:

1. King Abdullah Univ. of Science and Technology (Saudi Arabia)

2. Effat Univ. (Saudi Arabia)

Publisher

SPIE

Reference9 articles.

1. First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

2. Going beyond 4 Gbps data rate by employing RGB laser diodes for visible light communication

3. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

4. Origin of nonradiative recombination centers in AlGaInP grown by metalorganic vapor phase epitaxy

5. Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning

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5. Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature;Novel In-Plane Semiconductor Lasers XVIII;2019-03-01