Non-contact measurement of dopant depth profile with terahertz emission spectroscopy

Author:

Suzuki Kenji,Murakami Fumikazu,Baek Inkeun,Numata Mitsunori,Kim Ingi,Sungyoon Ryu,Ueyama Shinji,Yang Yusin,Tonouchi Masayoshi

Publisher

SPIE

Reference18 articles.

1. Enhancement of DRAM Performance by Adopting Metal–Interlayer–Semiconductor Source/Drain Contact Structure on DRAM Cell;Muyeong;IEEE TRANSACTIONS ON ELECTRON DEVICES,2021

2. Suppression of Row Hammer Effect by Doping Profile Modification in Saddle-Fin Array Devices for Sub-30-nm DRAM Technology;Chia-Ming;IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY,2016

3. Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAM

4. Cutting-edge terahertz technology

5. Tutorial: An introduction to terahertz time domain spectroscopy (THz-TDS)

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