1. Patterning performance of chemically amplified resist in EUV lithography;Fujii,2016
2. Negative-tone imaging with EUV exposure toward 13 nm hp;Tsubaki,2016
3. Metal oxide EUV photoresist performance for N7 relevant patterns and processes;Stowers,2016
4. Collapse behavior of single layer 193 and 157 nm resists: Use of surfactants in the rinse to realize the sub 130 nm nodes;Hien,2002
5. Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography;Frommhold,2016