Carrier dynamics in QW and bulk bismide and epitaxial lift off GaAs-In(Al)GaP double heterostructures grown by MOVPE for multi-junction solar cells-Reference-Cited by-同舟云学术

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Carrier dynamics in QW and bulk bismide and epitaxial lift off GaAs-In(Al)GaP double heterostructures grown by MOVPE for multi-junction solar cells

Published:2016-03-14 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Sin Yongkun,Peterson Mark,Lingley Zachary,LaLumondiere Stephen,Moss Steven C.,Kim Honghyuk,Forghani Kamran,Guan Yingxin,Kim Kangho,Lee Jaejin,Mawst Luke J.,Kuech Thomas F.,Tatavarti Rao

Publisher

SPIE

Reference17 articles.

1. Derivation of 12- and 14-bandk·pHamiltonians for dilute bismide and bismide-nitride semiconductors

2. Band gap of GaAs1−xBix, 0

3. New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy

4. Bismuth alloying in GaAs: a first-principles study

5. Valence-band anticrossing in mismatched III-V semiconductor alloys

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Applications of Bismuth-Containing III-V Semiconductors in Devices;Molecular Beam Epitaxy;2019-02-08

2. Deep level defects in dilute GaAsBi alloys grown under intense UV illumination;Semiconductor Science and Technology;2016-07-21

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