MWIR barrier infrared detectors with greater than 5μm cutoff using bulk InAsSb grown on GaSb substrates
Author:
Affiliation:
1. U.S. Army Night Vision & Electronic Sensors Directorate (United States)
2. IQE Inc. (United States)
Publisher
SPIE
Reference21 articles.
1. nBn detector, an infrared detector with reduced dark current and higher operating temperature
2. Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier
3. A high-performance long wavelength superlattice complementary barrier infrared detector
4. Recent progress in W-structured type-II superlattice photodiodes;Aifer,2007
5. nBn structure based on InAs∕GaSb type-II strained layer superlattices
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2. Features of Liquid–Phase Epitaxy of (InSb)1–z(Sn2)z Solid Solutions of Molecular Substitution on GaAs and GaP Substrates;2022 International Conference on Information Science and Communications Technologies (ICISCT);2022-09-28
3. Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors;Advanced Photonics Research;2021-12-15
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