Patterning performance of chemically amplified resist in EUV lithography-Reference-Cited by-同舟云学术

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Patterning performance of chemically amplified resist in EUV lithography

Published:2016-03-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Extreme Ultraviolet (EUV) Lithography VII
language:
Short-container-title:

Author:

Fujii Tatsuya¹,Matsumaru Shogo¹,Yamada Tomotaka¹,Komuro Yoshitaka¹,Kawana Daisuke¹,Ohmori Katsumi¹

Affiliation:

1. Tokyo Ohka Kogyo Co., Ltd. (Japan)

Publisher

SPIE

Reference11 articles.

1. Maintaining Moore’s law – Enabling Cost-friendly Dimensional Sacaling;Malllik,2015

2. Overlay and Edge Placement Control Strategies for the 7-nm node using EUV and ArF lithography;Mulkens,2015

3. Performance overview and outlook of EUV lithography systems;Pirati,2015

4. Novel method for characterizing resist performance

5. Acid generation mechanism in anion-bound chemically amplified resists used for extreme ultraviolet lithography;Komuro,2015

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancement of photosensitivity and stability of Sn-12 EUV resist by integrating photoactive nitrate anion;Applied Surface Science;2024-05

2. Iodonium functionalized polystyrene as non-chemically amplified resists for electron beam and extreme ultraviolet lithography;RSC Applied Polymers;2024

3. Predicting photoresist sensitivity using machine learning;Bulletin of the Korean Chemical Society;2023-08-23

4. Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-12-27

5. High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results;Nanomaterials;2020-08-14

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